The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering-Reference-Cited by-同舟云学术

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

Published:1989-09-15 Issue:6 Volume:66 Page:2589-2596
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murray R.,Newman R. C.,Sangster M. J. L.,Beall R. B.,Harris J. J.,Wright P. J.,Wagner J.,Ramsteiner M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.344224

Reference31 articles.

1. Silicon doping of MBE-grown GaAs films

2. Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy

3. Electrical activation and local vibrational mode from Si‐implanted GaAs

4. Raman‐scattering studies of silicon‐implanted gallium arsenide: The role of amorphicity

5. Resonance Raman scattering of Si local vibrational modes in GaAs

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