Mechanism of compensation in heavily silicon‐doped gallium arsenide grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98265
Reference19 articles.
1. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
2. Silicon doping of MBE-grown GaAs films
3. GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
4. Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
5. As4/Ga flux ratio dependence on Si incorporation in molecular beam epitaxial GaAs
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