Fingerprinting the vibrational signatures of dopants and defects in a fully random alloy: An ab initio case study of Si, Se, and vacancies in In0.5Ga0.5As-Reference-Cited by-同舟云学术

Fingerprinting the vibrational signatures of dopants and defects in a fully random alloy: An ab initio case study of Si, Se, and vacancies in In0.5Ga0.5As

Published:2020-05-29 Issue:20 Volume:127 Page:205704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jia Haili¹^ORCID,Wang Jingyang²³^ORCID,Clancy Paulette⁴^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA

2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

4. Department of Chemical and Biomolecular Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA

Funder

Maryland Advanced Research Computing Center

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5144191

Reference39 articles.

1. Spontaneous Ordering in Semiconductor Alloys

2. Interaction of iron with the local environment inSiGealloys investigated with Laplace transform deep level spectroscopy

3. Local vibrational modes of impurities in semiconductors

4. Structure and dynamics of carbon, silicon, and hydrogen complexes in AlAs, GaAs, andAlxGa1−xAs

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