Raman‐scattering studies of silicon‐implanted gallium arsenide: The role of amorphicity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336423
Reference14 articles.
1. Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
2. Raman spectra from Si and Sn implanted GaAs
3. Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
4. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
5. Defects in amorphous III-V compounds
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