Photoionization cross-section of the DX center in Te-doped AlxGa1−xSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366720
Reference22 articles.
1. Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate
2. Deep donor levels (DXcenters) in III‐V semiconductors
3. Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs
4. Control of the n-type doping in AlxGa1 − xSb: DX-center behavior of the Te impurity
5. DX‐center‐like traps and persistent photoconductivity in Te‐doped AlxGa1−xSb on GaSb
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