DX‐center‐like traps and persistent photoconductivity in Te‐doped AlxGa1−xSb on GaSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341740
Reference21 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
3. DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy
4. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
5. Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice --
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1. Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors;IEEE Transactions on Nuclear Science;2014-08
2. Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1−xSb;Journal of Applied Physics;2003-06-15
3. Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices;Journal of Crystal Growth;2003-04
4. Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb;Journal of Applied Physics;2002-03
5. In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells;Journal of Applied Physics;2001-11-15
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