Reduced injection current induced blueshift in an InGaN∕GaN quantum-well light-emitting diode of prestrained growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2767243
Reference14 articles.
1. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
2. Determination of photoluminescence mechanism in InGaN quantum wells
3. Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures
4. Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
5. Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
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