Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure-Reference-Cited by-同舟云学术

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Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure

Published:2006-11 Issue:21 Volume:18 Page:2269-2271
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Chen Horng-Shyang,Lu Chih-Feng,Yeh Dong-Ming,Huang Chi-Feng,Huang Jian-Jang,Yang Chih-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/36041/01715397.pdf?arnumber=1715397

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26

2. Novel machine learning-based prediction approach for nanoindentation load-deformation in a thin film: Applications to electronic industries;Computers & Industrial Engineering;2022-12

3. A Review on Light-Emitting-Diodes Characteristics;2022 International Conference on Intelligent Controller and Computing for Smart Power (ICICCSP);2022-07-21

4. High radiative recombination in GaN-based yellow light-emitting diodes;International Journal of Modern Physics B;2022-07-01

5. Recent progress in red light-emitting diodes by III-nitride materials;Semiconductor Science and Technology;2021-11-26

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