Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates-Reference-Cited by-同舟云学术

Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

Published:2023-09-11 Issue:9 Volume:10 Page:3233-3241
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Chen Huanqing¹^ORCID,Lei Menglai¹,Meng Linghai²^ORCID,Li Shukun¹,Lang Rui¹,Yu Guo²,Khan Muhammad Saddique Akbar¹,Wen Peijun³,Jiang Shengxiang²,Fu Jianbo²,Zong Hua²,Hu Xiaodong¹^ORCID

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics, Peking University, Beijing, 100871, People’s Republic of China

2. Guangxi Hurricane Chip Technology Co., Ltd., Guangxi, 545003, People’s Republic of China

3. School of Physical Education, South China University of Technology, Guangzhou, 510641, People’s Republic of China

Funder

National Key Research and Development Program of China

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Beijing Nova Program

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00646

Reference53 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

2. Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

3. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs

4. Effect of dislocation density on efficiency curves in InGaN/GaN multiple quantum well light-emitting diodes

5. Metal organic vapour phase epitaxy of GaN and lateral overgrowth