Determination of photoluminescence mechanism in InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124977
Reference24 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
3. Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
4. Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
5. Luminescences from localized states in InGaN epilayers
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