Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124255
Reference11 articles.
1. Ferroelectric field‐effect memory device using Bi4Ti3O12film
2. Integrated ferroelectrics
3. Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon
4. Characteristics of ferroelectric gate mos and mosfets
5. Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer
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2. Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications;Ferroelectrics Letters Section;2019-12-03
3. Lead-zirconate-titanate based metal/ferroelectric/high-K/semiconductor (M/Fe/High-K/S) gate stack for non-volatile memory applications;Ferroelectrics;2016-11-13
4. The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications;Microelectronic Engineering;2015-04
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