Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on silicon
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150199108007937
Reference13 articles.
1. Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals
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3. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
4. Ferroelectric field‐effect memory device using Bi4Ti3O12film
5. Ghosh, P. K., Bhalla, A. S. and Cross, L. E. Proc. of 6th IEEE Intl. Symp. on Appl. Ferroelectrics IEEE. pp.596New York: IEEE.
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