Lead-zirconate-titanate based metal/ferroelectric/high-K/semiconductor (M/Fe/High-K/S) gate stack for non-volatile memory applications
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150193.2016.1240565
Reference23 articles.
1. Status report on ferroelectric memory materials
2. Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories
3. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films
4. Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer
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