Impact of HfO2 buffer layer on the electrical characteristics of ferroelectric/high-k gate stack for nonvolatile memory applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-020-03632-0.pdf
Reference36 articles.
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3. B. Govoreanu, D.P. Brunco, J. Van Houdt, Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities. Solid State Electron. (2005). https://doi.org/10.1016/j.sse.2005.10.018
4. R. IM, Semiconductive translating device, US Pat. (1957), https://patents.google.com/patent/US2791760A/en. Accessed 3 Jun 2018
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