Lead–zirconate–titanate-based metal/ferroelectric/insulator/semiconductor structure for nonvolatile memories
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1465504
Reference14 articles.
1. Ferroelectric non-volatile memories for low-voltage, low-power applications
2. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
3. Physics of the ferroelectric nonvolatile memory field effect transistor
4. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
5. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films
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