Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications-Reference-Cited by-同舟云学术

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Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications

Published:2020-10-29 Issue:24 Volume:31 Page:22107-22118
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Tripathi Pramod Narayan^ORCID,Ojha Sanjeev Kumar,Nazarov Alexey

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-020-04713-9.pdf

Reference56 articles.

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2. T. Eshita, W. Wang, K. Nomura, K. Nakamura, H. Saito, H. Yamaguchi, S. Mihara, Y. Hikosaka, Y. Kataoka, and M. Kojima, in Jpn. J. Appl. Phys. (Institute of Physics Publishing, 2018), p. 11UA01.

3. A. Chen, Solid. State. Electron. 125, 25 (2016)

4. Y. Tarui, T. Hirai, K. Teramoto, H. Koike, K. Nagashima, Appl. Surf. Sci. 113–114, 656 (1997)

5. H. Takasu, J. Electroceramics 4, 327 (2000)

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