Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications
Author:
Affiliation:
1. Department of Electronics & Communication Engineering, Indian Institute of Information Technology-Allahabad, Allahabad, Uttar Pradesh, India.
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/07315171.2019.1668682
Reference17 articles.
1. Ferroelectric thin films: Review of materials, properties, and applications
2. Ferroelectric-Gate Field Effect Transistor Memories
3. Current Status of Ferroelectric Random-Access Memory
4. Current Status of Fabrication and Integration of Ferroelectric-Gate Fet's
5. Physical characteristics and electrical properties of Sr0.8Bi2+xTa2O9 films on Al2O3/Si annealed at high temperature
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and analysis of novel La:HfO2 gate stacked ferroelectric tunnel FET for non-volatile memory applications;Memories - Materials, Devices, Circuits and Systems;2024-04
2. Fabrication and characterization of Sr0.8Bi2.2Ta2O9 /Al2O3 gate stack for ferroelectric field effect transistors;Applied Physics A;2021-01-15
3. BiFeO3/Al2O3 gate stack for metal-ferroelectric-insulator-silicon memory FET for IoT applications;Applied Physics A;2021-01
4. Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications;Journal of Materials Science: Materials in Electronics;2020-10-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3