Physical characteristics and electrical properties of Sr0.8Bi2+xTa2O9 films on Al2O3/Si annealed at high temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621716
Reference20 articles.
1. A new solid state memory resistor
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4. Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer
5. Crystalline Quality and Electrical Properties ofPbZrxTi1-xO3Thin Films Prepared onSrTiO3-Covered Si Substrates
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1. Fabrication and characterization of Sr0.8Bi2.2Ta2O9 /Al2O3 gate stack for ferroelectric field effect transistors;Applied Physics A;2021-01-15
2. Effect of insulator layer thickness on electrical properties of Al/BiFeO3/ZrO2/p-Si for nonvolatile memory applications;Ferroelectrics Letters Section;2020-03-26
3. Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications;Ferroelectrics Letters Section;2019-12-03
4. Electrical and memory window properties of Sr0.8-xBaxBi2.2Ta2-yZryO9 ferroelectric gate in metal-ferroelectric-insulator-semiconductor structure;Journal of Electroceramics;2012-03-11
5. ATOMIC LAYER DEPOSITION HfO2 FILM USED AS BUFFER LAYER OF THE Pt/(Bi0.95Nd0.05)(Fe0.95Mn0.05)O3/HfO2/Si CAPACITORS FOR FeFET APPLICATION;Journal of Advanced Dielectrics;2011-07
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