Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150197608236584
Reference2 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
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