Profiling of defects using deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337340
Reference16 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Process‐Induced Interface and Bulk States in MOS Structures
3. Compensation mechanisms in GaAs
4. A correlation method for semiconductor transient signal measurements
5. Energy dependence of deep level introduction in electron irradiated GaAs
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