Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3660232
Reference22 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Multi-junction III–V solar cells: current status and future potential
4. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
5. Progress and challenges for next-generation high-efficiency multijunction solar cells
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3. Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs;Journal of Applied Physics;2019-10-14
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5. N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells;Japanese Journal of Applied Physics;2018-07-11
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