Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs
Author:
Affiliation:
1. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8904, Japan
2. School of Engineering, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
Funder
Japan Society for the Promotion of Science
New Energy and Industrial Technology Development Organization
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5111588
Reference41 articles.
1. Progress and challenges for next-generation high-efficiency multijunction solar cells
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. 1-eV solar cells with GaInNAs active layer
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5. Band structure of highly mismatched semiconductor alloys: Coherent potential approximation
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