N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8S3/a=08RD11/pdf
Reference38 articles.
1. 1-eV solar cells with GaInNAs active layer
2. Progress and challenges for next-generation high-efficiency multijunction solar cells
3. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
4. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
5. A comparison of MBE- and MOCVD-grown GaInNAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Inverted lattice-matched GaInP/GaAs/GaInNAsSb triple-junction solar cells;Photovoltaics for Space;2023
2. Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs;Journal of Applied Physics;2019-10-14
3. Incorporation of hydrogen into MBE-grown dilute nitride GaInNAsSb layers in a MOCVD growth ambient;Solar Energy Materials and Solar Cells;2018-10
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