Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352675
Reference14 articles.
1. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
4. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
5. Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
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