Influence of boron related defects on activation of silicon implanted into undoped semi‐insulating GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341013
Reference13 articles.
1. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
2. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
3. GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
4. Role of boron in electrical properties of semi‐insulating GaAs grown by the liquid encapsulated Czochralski method
5. Electrical activation of silicon implanted in semi‐insulating GaAs: Role of boron and the midgap electron trap (EL2)
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2. Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure;Journal of Crystal Growth;1998-09
3. Control of oxygen in undoped liquid encapsulation Czochralski GaAs;Journal of Crystal Growth;1996-09
4. Compensation in GaAs : Si in correlation to As pressure during the crystal growth;Solid State Communications;1994-03
5. Ambient gas constituents and segregation of carbon and boron in LEC GaAs single crystals: the role of water in boric oxide encapsulants;Journal of Crystal Growth;1993-11
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