Ambient gas constituents and segregation of carbon and boron in LEC GaAs single crystals: the role of water in boric oxide encapsulants
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs
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1. III Arsenide;Single Crystals of Electronic Materials;2019
2. Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux;MATERIALS TRANSACTIONS;2004
3. A combined carbon and oxygen segregation model for the LEC growth of SI GaAs;Journal of Crystal Growth;2003-01
4. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz);Progress in Crystal Growth and Characterization of Materials;2001-01
5. On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals;Crystal Research and Technology;2000-10
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