Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95215
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1. High-density GaAs integrated circuit manufacturing;IEEE Transactions on Semiconductor Manufacturing;2003-08
2. Bulk Crystal Growth;Handbook of Compound Semiconductors;1995
3. Ambient gas constituents and segregation of carbon and boron in LEC GaAs single crystals: the role of water in boric oxide encapsulants;Journal of Crystal Growth;1993-11
4. Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method;Japanese Journal of Applied Physics;1993-09-15
5. Vth control in GaAs using substrate parameters;III-Vs Review;1993-06
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