LSI processing technology for planar GaAs integrated circuits-Reference-Cited by-同舟云学术

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LSI processing technology for planar GaAs integrated circuits

Published:1980-06 Issue:6 Volume:27 Page:1116-1124
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Welch B.M.,Yie-Der Shen ,Zucca R.,Eden R.C.,Long S.I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31803/01480787.pdf?arnumber=1480787

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recovery and accumulation of ion irradiation damage leading to dose rate dependence in GaAs;Japanese Journal of Applied Physics;2020-08-27

2. Piezoelectrically-active defects and their impact on the performance of GaAs MESFETs;Journal of Materials Processing Technology;1995-12

3. Patterned, photon-driven cryoetching of GaAs and AlGaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-01

4. Computer simulation of Si‐implanted GaAs (001) single crystals;Journal of Applied Physics;1992-07

5. Trap effects in p-channel GaAs MESFET's;IEEE Transactions on Electron Devices;1992

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