Trap effects in p-channel GaAs MESFET's-Reference-Cited by-同舟云学术

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Trap effects in p-channel GaAs MESFET's

Published:1992 Issue:11 Volume:39 Page:2444-2451
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Peng L.L.,Canfield P.C.,Allstot D.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/4237/00163456.pdf?arnumber=163456

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor;Semiconductor Science and Technology;1998-09-01

2. Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors;Semiconductor Science and Technology;1998-02-01

3. Distributions of single‐carrier traps in GaAs/AlxGa1−xAs heterostructures;Applied Physics Letters;1995-10-09

4. Individual Interface Traps and Telegraph Noise;The Kluwer International Series in Engineering and Computer Science;1995

5. Individual interface traps at the Si-SiO2 interface;Journal of Materials Science: Materials in Electronics;1994-12

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