Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux
Author:
Affiliation:
1. Compound Semiconductor Wafer Dept., Dowa Semiconductor Co., Ltd.
2. Semiconductor Business Unit, Dowa Mining Co., Ltd.
3. Department of Metallurgy, Tohoku University
Publisher
Japan Institute of Metals
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/matertrans/45/4/45_4_1306/_pdf
Reference31 articles.
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3. 3) J. Nishio and H. Fujita: J. Crystal Growth 134 (1993) 97-104.
4. 4) J.D. Oberstar, B.G. Streetman, J.E. Baker, P. Williams, R.L. Henry and E.M. Awiggard: J. Crystal Growth 54 (1981) 443-448.
5. 5) Y. Itoh, Y. Kadota, T. Nozaki, H. Fukushima and K. Takeda: Jpn. J. Appl. Phys. 28 (1989) 210-211.
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