On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference19 articles.
1. Elastic recoil detection analysis with heavy ions
2. Study of hydrogen in DLC film by ERDA with 58Ni ions
3. Generation of the EL2 defect in n-GaAs irradiated by high energy protons
4. Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials
5. Evidence for Complexes of Hydrogen with Impurities or Defects in Bulk III-V Materials
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1. Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region;Semiconductors;2017-03
2. Improvement of radiation stability of semi-insulating gallium arsenide crystals by deposition of diamond-like carbon films;Optical Materials;2016-12
3. X-ray synchrotron diffraction studies of III-V semiconductor compounds implanted with hydrogen;physica status solidi (a);2006-02
4. Investigation of semi-insulating oxygen-doped GaAs;Journal of Crystal Growth;2002-05
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