Evidence for Complexes of Hydrogen with Impurities or Defects in Bulk III-V Materials-Reference-Cited by-同舟云学术

Evidence for Complexes of Hydrogen with Impurities or Defects in Bulk III-V Materials

Published:1987 Issue: Volume:104 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Clerjaud B.,Côte D.,Krause M.,Naud C.

Abstract

ABSTRACTSeries of sharp optical absorption lines around 2200 cm-1 in GaP, 2000 cm-1 in GaAs, and 2300 cm-1 in InP are observed in bulk materials. They are shown to be due to stretching local modes of vibration of P-H or As-H bonds, the hydrogen sitting nearby an impurity or defect. The origin of the hydrogen contamination of the bulk materials is discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference24 articles.

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