Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Electrical Measurements and X‐Ray Lattice Parameter Measurements of GaAs Doped with Se, Te, Zn, and Cd and the Stress Effects of These Elements as Diffusants in GaAs
2. Lattice superdilation phenomena in doped GaAs
3. Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski‐grown GaAs
4. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
5. Influence of boron related defects on activation of silicon implanted into undoped semi‐insulating GaAs
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1. Purification of ZnSe crystals from electrically active background impurities by ytterbium doping;physica status solidi (b);2014-06-23
2. Identification of the pressure-induced phase transition of ZnSe with the positron annihilation method;Chinese Physics B;2011-10
3. Effect of heat treatment and Si ion irradiation on ZnSxSe1−x single crystals grown by CVT method;Journal of Crystal Growth;2005-02
4. The effect of (Al, I) impurities and heat treatment on lattice parameter of single-crystal ZnSe;Journal of Crystal Growth;2000-06
5. Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing;Journal of Crystal Growth;1999-02
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