Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski‐grown GaAs

Author:

Okada Yasumasa,Orito Fumio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant;Crystal Growth Technology;2010-07-19

2. Precision d-spacing measurement of GaAs single crystals with synchrotron radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-07

3. Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing;Journal of Crystal Growth;1999-02

4. Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure;Journal of Crystal Growth;1998-09

5. Impurities Interactions in the Crystal Growth of LEC Gallium Arsenide;Materials Science Forum;1996-02

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