Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x-Reference-Cited by-同舟云学术

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

Published:2017-07-17 Issue:3 Volume:111 Page:033509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Sungjun¹^ORCID,Chang Yao-Feng²^ORCID,Kim Min-Hwi¹,Park Byung-Gook¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea

2. Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758, USA

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4985268

Reference42 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Physical and chemical mechanisms in oxide-based resistance random access memory

3. Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

4. Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

5. Surface effects of electrode-dependent switching behavior of resistive random-access memory

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