Surface effects of electrode-dependent switching behavior of resistive random-access memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4963671
Reference29 articles.
1. Probing Surface Band Bending of Surface-Engineered Metal Oxide Nanowires
2. Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory
3. Resistive switching behaviors of ZnO nanorod layers
4. ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
5. Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
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