Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment-Reference-Cited by-同舟云学术

Ultralow switching current in HfOx/ZnO bilayer with tunable switching power enabled by plasma treatment

Published:2016-08-08 Issue:6 Volume:109 Page:063501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lai Yunfeng¹²,Zeng Zecun¹,Liao Chenghao¹,Cheng Shuying¹,Yu Jinling¹,Zheng Qiao¹,Lin Peijie¹

Affiliation:

1. School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, People's Republic of China

2. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Fujian Province (Fujian Provincial Natural Science Foundation)

Department of Education, Fujian Province (Fujian Educational Department)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960798

Reference46 articles.

1. Switching properties of thin Nio films

2. New conduction and reversible memory phenomena in thin insulating films

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Resistance random access memory

5. Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

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