Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface-Reference-Cited by-同舟云学术

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface

Published:2014-02-13 Issue:20 Volume:26 Page:3275-3281
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Qian Min¹,Pan Yiming²,Liu Fengyuan¹,Wang Miao²,Shen Haoliang¹,He Daowei¹,Wang Baigeng²,Shi Yi¹,Miao Feng²,Wang Xinran¹

Affiliation:

1. National Laboratory of Solid-State Microstructures; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials; School of Electronic Science and Engineering; Nanjing University; Nanjing 210093 P. R. China

2. National Laboratory of Solid-State Microstructures; School of Physics; Nanjing University; Nanjing 210093 P. R. China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference46 articles.

1. Van der Waals heterostructures

2. A roadmap for graphene

3. The electronic properties of graphene

4. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

5. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

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