Affiliation:
1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University 1 , Xi'an 710071, China
2. School of Advanced Materials and Nanotechnology, Xidian University 2 , Xi'an 710071, China
Abstract
In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent cycle-to-cycle stability, and excellent nonvolatile performance. As an insertion layer, TiN prevents excessive absorption of nitrogen ions by a Ta electrode and avoids the formation of the unstable metal–semiconductor interface, which significantly reduces cycle-to-cycle variability of SiNx-based RRAM. Due to high conductivity, the TiN layer has a small voltage divider effect when voltage was applied, which helps to achieve low power consumption characteristics. This paper provides a direction for improving performance of nitride-based RRAM, which is useful for further development of highly reliable RRAM.
Funder
the National Natural Science Foundation of China
Union Foundation of Ministry of Education of China
Natural Science Foundation of Shaanxi Province
the Fundamental Research Funds for the Central Universities
the Innovation Fund of Xidian University
Subject
Physics and Astronomy (miscellaneous)
Cited by
2 articles.
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