Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOxbased Memristive Devices-Reference-Cited by-同舟云学术

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOxbased Memristive Devices

Published:2017-07-04 Issue:32 Volume:27 Page:1700432
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Sharath Sankaramangalam Ulhas¹^ORCID,Vogel Stefan¹,Molina-Luna Leopoldo¹,Hildebrandt Erwin¹,Wenger Christian²,Kurian Jose¹,Duerrschnabel Michael¹,Niermann Tore³,Niu Gang²⁴,Calka Pauline²,Lehmann Michael³,Kleebe Hans-Joachim¹,Schroeder Thomas²⁵,Alff Lambert¹

Affiliation:

1. Institute of Materials Science; Technische Universität Darmstadt; Alarich-Weiss-Str. 2 Darmstadt 64287 Germany

2. IHP GmbH; Leibniz-Institut für innovative Mikroelektronik; Im Technologiepark 25 Frankfurt Oder 15236 Germany

3. Institut für Optik und Atomare Physik; Technische Universität Berlin; Straße des 17. Juni 135 Berlin 10623 Germany

4. Electronic Materials Research Laboratory; Key Laboratory of the Ministry of Education & International Center for Dielectric Research; Xi'an Jiaotong University; Xi'an 710049 China

5. Brandenburgische Technische Universität; Konrad-Zuse-Str. 1 Cottbus 03046 Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Hessisches Ministerium für Wissenschaft und Kunst

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201700432/fullpdf

Reference80 articles.