Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM

Abstract

This Letter is about the role of the bottom electrode in the resistive switching of SiNx-based resistive random-access memory. Titanium nitride (TiN) and platinum (Pt) are used as bottom electrodes to fabricate devices whose I–V characteristics are compared. The devices with Pt as the bottom electrode have digital resistive switching behavior with a main memory window. However, the devices with TiN as the bottom electrode provide an analog resistive switching with the gradual operation. We propose that this switching difference is due to the different work functions of the top and bottom electrodes and the nitrogen-rich layer formed at the SiNx/TiN interface. The work function of the bottom electrode is larger than the top electrode in the device with Pt electrodes, which are considered non-reactive. However, the difference in the work functions between the bottom and top electrodes is not much for the device with a TiN electrode. As the nitrogen-rich layer formed at the SiNx/TiN interface has nitrogen accommodation ability, the nitrogen ions are more likely to drift to the bottom electrode, and resistive switching changes from digital to analog for the device with TiN electrodes.