Noncontact characterization for grown‐in defects in Czochralski silicon wafers with a laser/microwave photoconductance method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110271
Reference6 articles.
1. Noncontact minority‐carrier lifetime measurement for magnetic field applied Czochralski silicon crystals
2. Bulk and surface components of recombination lifetime based on a two‐laser microwave reflection technique
3. Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance technique
4. Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers
5. Thermally induced stacking faults distributed inhomogeneously in Czochralski silicon crystals
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1. Characterization of Oxidation-Induced Stacking Fault Rings in Cz Silicon: Photoluminescence Imaging and Visual Inspection After Wright etch;Energy Procedia;2012
2. Bi-Surface Photoconductivity Decay Analysis for Polysilicon Back Sealed Wafers with Thermal Process Induced Contamination;Japanese Journal of Applied Physics;1998-12-15
3. Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination;Journal of Applied Physics;1998-07
4. Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals;MRS Proceedings;1998-01
5. Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method;MRS Proceedings;1997
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