Characterization of Oxidation-Induced Stacking Fault Rings in Cz Silicon: Photoluminescence Imaging and Visual Inspection After Wright etch
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Elsevier BV
Reference10 articles.
1. The mechanism of swirl defect s formation in silicon”;Voronkov;J. Cryst. Growth,1982
2. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon;Voronkov;J Cryst. Growth,1999
3. Engineering analysis of microdefect formation during silicon crystal growth;Brown;J. Cryst. Growth,2001
4. Formation process of Sracking Faults with Ringlike Distribution in CZ-Si Wafers;Hasebe;Jpn. J. Appl. Phys.,1989
5. Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging;Haunschild;Phys. Status Solidi RRL,2011
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