The Effect of Pull Speed and Heat Treatment on Thermal Donors in Czhocralski Silicon-Reference-Cited by-同舟云学术

The Effect of Pull Speed and Heat Treatment on Thermal Donors in Czhocralski Silicon

Published:2021-11-17 Issue:1 Volume:219 Page:2100655
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Olsen Espen¹^ORCID,Mehl Torbjørn¹,Stalheim Helene Eikaas¹,Juel Mari²,Søndenå Rune³,Burud Ingunn¹

Affiliation:

1. Faculty of Science and Technology Department of Physics Norwegian University of Life Sciences (NMBU) Universitetstunet 3 Ås 1432 Norway

2. Department for Sustainable Energy Technology SINTEF Industry P.O. Box 4760 Torgarden Trondheim N-7465 Norway

3. Department for Solar Energy Institute for Energy Technology P.O. Box 40 Kjeller N-2027 Norway

Funder

Norges Forskningsråd

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100655

Reference30 articles.

1. Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals

2. The effect of oxide precipitates on minority carrier lifetime in n-type silicon

3. Experimental and Theoretical Study of Oxygen Precipitation and the Resulting Limitation of Silicon Solar Cell Wafers

4. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

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1. Effect of oxygen-related defects on the performance of seed-end wafers in Ga-doped recharged Czochralski silicon: Thermal donors;Journal of Crystal Growth;2024-03

2. Determination of activation energy of technological thermodonors in uniaxially deformed n−Si;Physica B: Condensed Matter;2023-12

3. Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing;Solar RRL;2022-12-25