Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing-Reference-Cited by-同舟云学术

Comprehensive Model for Charge Carrier Recombination in Czochralski‐Grown Silicon Due to Oxygen Precipitation in Industrial Solar Cell Manufacturing

Published:2022-12-25 Issue:4 Volume:7 Page:2200980
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Solar RRL

Author:

Maus Stephan¹^ORCID,Mack Sebastian¹,Schön Jonas¹²,Meßmer Marius¹,Wolf Andreas¹,Paul Oliver³

Affiliation:

1. Department of Photovoltaic Production Technology Fraunhofer Institute for Solar Energy Systems (ISE) Heidenhofstrasse 2 79110 Freiburg Germany

2. Department of Sustainable Systems Engineering (INATECH) University of Freiburg Emmy-Noether-Straße 2 79110 Freiburg Germany

3. Department of Microsystems Engineering (IMTEK) University of Freiburg Georges-Köhler-Allee 103 79110 Freiburg Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202200980

Reference61 articles.

1. Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

2. Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production

3. Y. C.Wang innPV Workshop Hamelin Conexio-PSE GmbH Freiburg Germany2021.

4. O.Nielsen innPV Workshop Hamelin Conexio-PSE GmbH Freiburg Germany2021.

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