Bulk and surface components of recombination lifetime based on a two‐laser microwave reflection technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348857
Reference9 articles.
1. A Nondestructive Method for Measuring the Spatial Distribution of Minority Carrier Lifetime in Silicon Wafer
2. Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals
3. Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption
4. A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductors
5. An rf bridge technique for contactless measurement of the carrier lifetime in silicon wafers
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