Author:
Ogita Y.,Uematsu Y.,Daio H.
Abstract
ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain
the true bulk lifetime and surface recombination velocities in silicon
wafers with variously finished surfaces. Thermally oxidized n-type CZ
silicon wafers with and without a poly-Si back seal (PBS) were characterized
with the BSPCD method using 500 MHz-UHF wave reflection. It has been found
that the surface recombination velocity of the PBS surface is, 4027 cm/s
while that of the no-PBS surface is 16 cm/s, for example. The very fast
surface recombination velocity is attributed to the poly-Si / Si interface
character. Moreover, the bulk lifetime calculated in the PBS wafer is much
higher than that in the no-PBS one, which reveals the PBS gettering
performance for the thermal oxidation induced contamination.
Publisher
Springer Science and Business Media LLC