Noncontact minority‐carrier lifetime measurement for magnetic field applied Czochralski silicon crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348641
Reference9 articles.
1. Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals
2. Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers
3. A Comparison of Minority‐Carrier Lifetime in As‐Grown and Oxidized Float‐Zone, Magnetic Czochralski, and Czochralski Silicon
4. Nonradiative recombination via deep impurity levels in silicon: Experiment
5. Intrinsic Optical Absorption in Germanium-Silicon Alloys
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers;Materials Science and Engineering: B;1996-01
2. Non-Destructive Assessment Of Semiconductor Carrier Lifetime Using Photothermal Radiometry;MRS Proceedings;1996
3. Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
4. Contactless measurement of bulk carrier lifetime in thick silicon wafers by an induced eddy current;Semiconductor Science and Technology;1995-01-01
5. Influence of Crystal Thermal History on Surface Recombination Lifetime at Elevated Temperatures in Magnetic-Field-Applied Czochralski Silicon;Japanese Journal of Applied Physics;1994-04-15
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