Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100374
Reference13 articles.
1. Striations in CZ silicon crystals grown under various axial magnetic field strengths
2. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
3. Recombination lifetime using the pulsed MOS capacitor
4. Recombination lifetime in oxygen-precipitated silicon
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2. Efficiency-limiting defects in silicon solar cell material;Journal of Electronic Materials;1996-09
3. Oxygen precipitation in silicon;Journal of Applied Physics;1995-05
4. Radiation damage and minority carrier lifetime in crystalline silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-11
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