On the determination of minority carrier lifetime from the transient response of an MOS capacitor-Reference-Cited by-同舟云学术

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On the determination of minority carrier lifetime from the transient response of an MOS capacitor

Published:1967-11 Issue:11 Volume:14 Page:781-784
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Heiman F.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31639/01474830.pdf?arnumber=1474830

Cited by 238 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient Responses of The Majority and Minority Carriers During Rapid Reduction of The Inversion Charge in an MOS Structure;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22

2. Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation;IEEE Transactions on Electron Devices;2024-02

3. Study and Optimization of Two-State Transient Currents at Millisecond Time Scales in MIS Tunnel Diodes;IEEE Transactions on Electron Devices;2023-10

4. Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods;IEEE Transactions on Electron Devices;2023-08

5. Conduction Mechanism in Acceptor- or Donor-Doped ZrO₂ Bulk and Thin Films;ACS Applied Materials & Interfaces;2023-06-22

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